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Vishay Intertechnology 600 V E Collection Energy MOSFET in Compact Prime-Facet Cooling PowerPAK® 8 x 8LR Delivers Trade’s Lowest RDS(ON)*Qg FOM


Fourth-Era System Allows Larger Energy Scores and Density Versus D²PAK Whereas Decreasing Conduction and Switching Losses to Enhance Effectivity

To supply increased effectivity and energy density for telecom, industrial, and computing purposes, Vishay Intertechnology, Inc. right now launched its first fourth-generation 600 V E Collection energy MOSFET within the new PowerPAK 8 x 8LR bundle. In comparison with previous-generation gadgets, the Vishay Siliconix n- channel SiHR080N60E slashes on-resistance by 27 % and resistance instances gate cost, a key determine of advantage (FOM) for 600 V MOSFETs utilized in energy conversion purposes, by 60 % whereas offering increased present in a smaller footprint than gadgets within the D²PAK bundle.

Vishay affords a broad line of MOSFET applied sciences that assist all phases of the facility conversion course of, from excessive voltage inputs to the low voltage outputs required to energy the newest excessive tech gear. With the SiHR080N60E and different gadgets within the fourth-generation 600 V E Collection household, the corporate is addressing the necessity for effectivity and energy density enhancements in two of the primary phases of the facility system structure — energy issue correction (PFC) and subsequent DC/DC converter blocks. Typical purposes will embody servers, edge computing, tremendous computer systems, and information storage; UPS; excessive depth discharge (HID) lamps and fluorescent ballast lighting; telecom SMPS; photo voltaic inverters; welding gear; induction heating; motor drives; and battery chargers.

Measuring 10.42 mm by 8 mm by 1.65 mm, the SiHR080N60E’s compact PowerPAK 8 x 8LR bundle incorporates a 50.8 % smaller footprint than the D²PAK whereas providing a 66 % decrease top. On account of its top-side cooling, the bundle delivers glorious thermal functionality, with a particularly low junction to case (drain) thermal resistance of 0.25 °C/W. This enables for 46 % increased present than the D²PAK on the similar on-resistance stage, enabling dramatically increased energy density. As well as, the bundle’s gullwing leads present glorious temperature cycle functionality.

Constructed on Vishay’s newest energy-efficient E Collection superjunction expertise, the SiHR080N60E options low typical on-resistance of 0.074 Ω at 10 V and extremely low gate cost all the way down to 42 nC. The ensuing FOM is an industry-low 3.1 Ω*nC, which interprets into lowered conduction and switching losses to save lots of vitality and improve effectivity in energy techniques > 2 kW. For improved switching efficiency in hard-switched topologies resembling PFC, half-bridge, and two-switch ahead designs, the MOSFET launched right now supplies low typical efficient output capacitances Co(er) and Co(tr) of 79 pF and 499 pF, respectively. The bundle additionally supplies a Kelvin connection for improved switching effectivity.

The system is RoHS-compliant and halogen-free, and it’s designed to face up to overvoltage transients in avalanche mode with assured limits by way of 100 % UIS testing.

Samples and manufacturing portions of the SiHR080N60E can be found now. For lead time data, please contact your native gross sales workplace.

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